The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2001
Filed:
May. 03, 1999
Chen-Chung Hsu, Hsinchu Hsien, TW;
Yih-Jau Chang, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of manufacturing an electrostatic discharge protective circuit. A substrate having an inner circuit region and an electrostatic discharge protective circuit is provided. The inner circuit region comprises a first gate electrode, a source/drain region and a first suicide layer formed on the first gate electrode. The electrostatic discharge protective circuit region comprises a second gate electrode and a second silicide layer formed on the second gate electrode. A salicide block layer is formed to cover the electrostatic discharge protective circuit region. A salicide process is performed. The salicide block layer is removed to expose the electrostatic discharge protective circuit region.