The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2001
Filed:
Apr. 29, 1998
Applicant:
Inventors:
Masanori Numano, Oita, JP;
Moriya Miyashita, Yokkaichi, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/930 ;
U.S. Cl.
CPC ...
H01L 2/930 ;
Abstract
A semiconductor substrate is provided which can efficiently exhibit intrinsic gettering (IG) effect, is less likely to cause slipping or dislocation, and causes no significant lowering in mechanical strength. The semiconductor substrate has bulk micro defects dispersed at a density of not less than 10,micro defects/cm,in the interior thereof.