The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2001
Filed:
Jul. 08, 1998
Applicant:
Inventors:
Cozy Ban, Tokyo, JP;
Akinobu Teramoto, Tokyo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/144 ;
Abstract
A silicon wafer is disposed in an inert gas atmosphere, and the temperature thereof is raised, and dichlorosilane is introduced to cause a surface reaction of the silicon wafer to occur, and then dichlorosilane to which WF,is added is introduced so as to deposit tungsten silicide thinly on the above-mentioned silicon wafer. Next, the WF,is stopped and the dichlorosilane is introduced, and after that, dichlorosilane to which WF,is added is introduced so as to deposit the tungsten silicide, thus forming a tungsten silicide film.