The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 24, 2001

Filed:

Feb. 16, 1999
Applicant:
Inventor:

Yuval Wasserman, Sunnyvale, CA (US);

Assignee:

STEAG RTP Systems, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/144 ;
Abstract

The method and apparatus for heat treating and etching refractory metal and silicides of the refractory metal include integrated multi-chamber, multi-processing of substrates to react refractory metal and exposed silicon in self-aligned silicidation operations. Unreacted refractory metal on silicon oxide regions is selectively etched away distinctively from reacted silicide to yield highly precise self-aligned regions of silicide. Subsequent heat treatment at elevated temperatures reduces the sheet resistance of the silicide to yield highly conductive regions that are conducive to formation of conductor lines less than 0.25 &mgr;m wide.


Find Patent Forward Citations

Wasserman, Yuval. (2001). Method and apparatus for processing refractory metals on semiconductor substrates (U.S. Patent No. 6221766). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6221766

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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