The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2001
Filed:
Jul. 07, 1998
Takao Fujikawa, Takasago, JP;
Yutaka Narukawa, Takasago, JP;
Itaru Masuoka, Takasago, JP;
Kohei Suzuki, Kobe, JP;
Kabushiki Kaisha Kobe Seiko Sho, Kobe, JP;
Abstract
The present invention provides a method for processing a substrate in which crystal defects occurring according to ion implantation can be prevented from being integrated to form defects such as dislocation or large vacancies in the manufacture of a SIMOX substrate by implanting oxygen atom to a Si base by ion implantation and reacting it with Si to form a buried oxide film. The annealing after ion implantation is performed under a gas atmosphere pressurized to, for example, about 100 MPa. In the pressurized state, a structure having a smaller volume is thermodynamically more stable, and a behavior as increases crystal distortion is arrested in the annealing. Thus, crystal defects can be laid in uniformly dispersed state, vacancies can be also extinguished, and a Si base of good quality suitable for manufacture of ULSI in which defects such as dislocation are reduced can be provided.