The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2001
Filed:
Apr. 02, 1998
Applicant:
Inventors:
Liang-Gi Yao, Taipei, TW;
John Chin-Hsiang Lin, Kaohsiung, TW;
Hua-Tai Lin, Tainan, TW;
Erik S. Jeng, Hsinchu, TW;
Hsiao-Chin Tuan, Hsinchu, TW;
Assignee:
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/11 ;
U.S. Cl.
CPC ...
G03F 7/11 ;
Abstract
The present invention provides an anti-reflection films for lithographic application on polysilicon containing substrate. A structure for improving lithography patterning in an integrated circuit comprises a polysilicon layer, a diaphanous layer located above the polysilicon layer, an anti-reflection layer located above the diaphanous layer, and then a photoresist layer located above the anti-reflection layer for patterning the integrated circuit pattern. The anti-reflection layer is preferably oxynitride.