The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2001
Filed:
Apr. 05, 1999
Bih-Tiao Lin, Ping-Tung Hsien, TW;
Taiwan Semiconductor Mfg. Co., Ltd., Hsinchu, TW;
Abstract
A method for fabricating a shallow trench isolation structure. A pad oxide layer and a pad silicon nitride layer are formed over a substrate and are patterned to form a trench in the substrate. A high-density plasma (HDP) oxide layer is formed to fill the trench of a certain thickness. A silicon nitride layer is formed over the substrate. The silicon nitride layer and the oxide layer together form a protruding portion. A chemical-mechanical polishing is performed in a range of from at least removing the protruding portion to exposing the silicon nitride layer. The HDP oxide layer is etched until the HDP oxide layer on the pad silicon nitride layer is removed. The pad silicon nitride layer and the silicon nitride layer are removed by etching.