The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2001
Filed:
Apr. 15, 1999
Applicant:
Inventor:
Yi-Tyng Wu, Chiayi, TW;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/120 ;
U.S. Cl.
CPC ...
H01L 2/120 ;
Abstract
A method of fabricating a bottom electrode is provided. A dielectric layer comprising a first opening is formed on the substrate. A conductive layer is formed on the dielectric layer to fill the first opening. A first patterned mask layer comprising a second opening is formed on the conductive layer. An isotropic etching step is performed on the conductive layer with the first patterned mask layer serving as a mask. A recess with a non-vertical sidewall is formed on the conductive layer under the second opening. The first patterned mask layer is removed. The conductive layer is patterned to form a bottom electrode with the recess. A hemispherical grained silicon layer is formed on the bottom electrode.