The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2001
Filed:
Nov. 17, 1998
Keh-Ching Huang, Hsinchu, TW;
Wen-Jeng Lin, Pan-Chiao, TW;
Tz-Guei Jung, Hsinchu, TW;
Jacob Chen, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
The invention provides a manufacturing method of forming a bottom plate for a capacitor on a substrate, wherein the substrate comprises a MOS transistor having a gate and a pair of source/drain regions. A crown-liked conductive plate is formed over an insulation oxide layer and a contact plug. The crown-liked conductive plate penetrates the insulation layer and the stop layer, wherein the bottom of the crown-like conductive plate is electrically connected to the contact plug. The crown-like conductive plate, served as the bottom plate for a DRAM capacitor, is composed of tungsten silicide or a combination of a tungsten nitride layer and a tungsten layer.