The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2001
Filed:
Sep. 21, 1999
Simon J. Molloy, Orlando, FL (US);
Nace Layadi, Orlando, FL (US);
Allen Yen, Orlando, FL (US);
Brian D. Crevasse, Apopka, FL (US);
Steven A. Lytle, Orlando, FL (US);
Lucent Technologies Inc., Murray Hill, NJ (US);
Abstract
A method for stripping photoresist material (,) from a semiconductor substrate (,) avoids incorporation of sodium and other contaminant ions from a rework solvent. An oxygen and hydrogen plasma mixture strips the photoresist material without significant introduction of oxygen into the titanium nitride layer (,). Any oxidation of the titanium nitride is reversed by exposing the substrate to an oxygen-free, reducing plasma, such as a hydrogen-containing plasma. The titanium nitride layer is thereby much less susceptible to incorporation of contaminant ions in a subsequent cleaning with rework solvent than a layer which has been extensively oxidized during the plasma stripping process.