The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2001
Filed:
Jul. 09, 1993
Hua Quen Tserng, Dallas, TX (US);
Paul Saunier, Garland, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
Generally, and in one form of the invention, an integrated circuit is disclosed for providing low-noise and high-power microwave operation comprising: an epitaxial material structure comprising a substrate,a low-noise channel layer,a low-noise buffer layer,a power channel layer,and a moderately doped wide bandgap layer,a first active region,comprising a first source contact,above the wide bandgap layer,a first drain contact,above the wide bandgap layer,wherein the first source contact,and the first drain contact,are alloyed and thereby driven into the material structure to make contact with the low-noise channel layer,and a first gate contact,to the low-noise buffer layer,and a second active region,comprising a second source contact,above the wide bandgap layer,a second drain contact,above the wide bandgap layer,wherein the second source contact,and the second drain contact,are alloyed and thereby driven into the material structure to make contact with the power channel layer,and a second gate contact,to the wide bandgap layer,wherein the first active region,and the second active region,are electrically isolated from one another, and whereby the integrated circuit is formed with all epitaxial layers formed during a single epitaxial growth cycle and is capable of providing low-noise, high-power, and switching operation at microwave frequencies.