The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2001
Filed:
Oct. 21, 1997
Applicant:
Inventors:
Hiroyuki Watanabe, Bisai, JP;
Hideki Mizuhara, Hashima, JP;
Kaori Misawa, Gifu-ken, JP;
Masaki Hirase, Hashima, JP;
Hiroyuki Aoe, Joyo, JP;
Assignee:
Sanyo Electric Co., Ltd., , JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/131 ;
U.S. Cl.
CPC ...
H01L 2/131 ;
Abstract
A semiconductor producing method includes the steps of: forming an SOG pre-film on a semimanufactured semiconductor device by means of spin-on-glass (SOG) process; and forming a modified SOG film by doping the SOG pre-film with at least one impurity ion selected from: inert gas ions; simple ions of Groups IIIb, IVb, Vb, VIb, VIIb, IVa and Va elements; and ions of compounds containing any one of Groups IIIb, IVb, Vb, VIb, VIIb, IVa and Va elements.