The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2001
Filed:
Oct. 28, 1999
Applicant:
Inventors:
Hsiao-Pang Chou, Taipei Hsien, TW;
Jung-Chao Chiou, Hsinchu, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/131 ; H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/131 ; H01L 2/1336 ;
Abstract
A method for forming an opening in a semiconductor device is provided. A silicon-oxy-nitride layer is formed on a dielectric layer and then a photoresist layer with a first opening is formed on the silicon-oxy-nitride layer. A polymer film is formed on sidewalls of the first opening. A second opening narrower than the first opening is formed in the dielectric layer with the photoresist layer and the polymer film.