The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 10, 2001

Filed:

Jan. 20, 1999
Applicant:
Inventors:

Christopher F. Lyons, Fremont, CA (US);

Michael K. Templeton, Atherton, CA (US);

Kathleen R. Early, Santa Clara, CA (US);

Assignee:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/13065 ;
U.S. Cl.
CPC ...
H01L 2/13065 ;
Abstract

In one embodiment, the present invention relates to a method of forming a conductive structure having a width of about 100 nm or less, involving the steps of providing a substrate having a conductive film; patterning a mask over a first portion of the conductive film wherein a second portion of the conductive film is exposed; partially etching the second portion of the conductive film thereby forming a sidewall in the conductive film; removing the mask; depositing a sidewall film over the conductive film, the sidewall film having a vertical portion adjacent the sidewall of the conductive film and a horizontal portion in areas not adjacent the sidewall of the conductive film; removing the horizontal portion of the sidewall film exposing a third portion of the conductive film; and etching the third portion of the conductive film thereby providing the conductive structure having a width of about 100 nm or less underlying the vertical portion of the sidewall film.


Find Patent Forward Citations

Lyons, Christopher. (2001). Simplified sidewall formation for sidewall patterning of sub 100 nm structures (U.S. Patent No. 6214737). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6214737

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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