The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2001
Filed:
Sep. 10, 1999
Shye-Lin Wu, Hsinchu, TW;
Texas Instruments - Acer Incorporated, Hsin-Chu, TW;
Abstract
The method includes forming a pad oxide, a polysilicon layer over a substrate. Next, an oxide layer is formed over the polysilicon layer. An opening is formed in the oxide layer, the polysilicon layer, and the pad layer. A trench is formed by etching the substrate using the oxide layer as a mask. A sidewall structure is then formed on the opening. Next, an exposed portion of the substrate is etched by using the sidewall structure as a mask. The sidewall structure and the oxide layer are then removed. An oxide and an oxynitride layer are then formed on the aforesaid feature. A semiconductor layer is then formed over the oxynitride layer. A portion of the semiconductor layer is oxidized for forming an insulating layer. Finally, a refilling layer is formed over the insulating layer and the substrate is planarized for having a planar surface.