The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2001
Filed:
Oct. 22, 1999
Applicant:
Inventor:
Robin Lee, Hsinchu Hsien, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
A method for fabricating a self-aligned ultra short channel. The method uses double spacers as a hard mask, so that DRAM with the ultra short channel is formed in a self-aligned process. This method not only reduces the channel length, but also adjusts the dopants in lightly doped drains (LDD) at a side of the storage node opening and at the side of the bit line, respectively, so as to optimize the device property.