The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2001
Filed:
Nov. 18, 1999
Hiroshi Kimura, Hyogo, JP;
Tadashi Nishimura, Hyogo, JP;
Takahiro Tsuruda, Hyogo, JP;
Kazutami Arimoto, Hyogo, JP;
Tadato Yamagata, Hyogo, JP;
Kazuyasu Fujishima, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
In a semiconductor device and a method of manufacturing the same, an isolating and insulating film is provided at an end neighboring to a second impurity region with a groove extended to a semiconductor substrate. This removes a crystal defect existed at the end of the isolating and insulating film, and thus prevents leak of a current at this portion from a storage node. Consequently, provision of the groove at the edge portion of the isolating oxide film neighboring to the impurity region removes a crystal defect at this region, and thus eliminates a possibility of leak of a current.