The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2001
Filed:
Feb. 17, 1998
Srinivasan Sundararajan, Sunnyvale, CA (US);
Kenneth P. MacWilliams, Los Gatos, CA (US);
David Mordo, San Jose, CA (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
An antireflective layer for use in semiconductor photolithography is fabricated of silicon nitride (Si,N,H,) in a plasma-enhanced chemical vapor deposition process using a gaseous mixture of ammonia, silane and nitrogen. By varying the process temperature and the ratio of ammonia to silane, acceptable values of the refractive index n and extinction coefficient k can be obtained. The silicon nitride layer produced by this technique etches rapidly and therefore allows the antireflective layer to be removed quickly, thereby minimizing the damage to the underlying structures in a semiconductor device.