Combined ion-source and target-sputtering magnetron and a method for sputtering conductive and nonconductive materials

Abstract

A combined ion-source and sputtering magnetron apparatus of the invention comprises a vacuum working chamber that contains a sputtering magnetron, an object to be treated fixed inside the housing of the chamber, and an ion-beam source installed within the working chamber between the object and the sputtering magnetron. In a preferred embodiment, the ion source is a cold-cathode ion source with a closed loop ion-emitting slit and drift of electrons in crossed electric and magnetic fields. The ion source emits the ion beam in the radial inward or outward direction onto the surface of the magnetron target at an oblique angle to the target surface. The bombardment of the target surface with the ion beam generates a large amount of sputtered particles. In addition, the ion bombardment forms a large amount of secondary electrons which are accelerated in the direction away from the target and are held in the crossed electric and magnetic fields of the magnetron target. These electrons ionize molecules of a working gas and forms a plasma. Ions are extracted from the plasma towards the target and sputter its material. This process is maintained in a steady mode. The apparatus is shown in various embodiments including a conveyor treatment.