The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2001
Filed:
May. 26, 1999
Atsuto Okamoto, Aichi-ken, JP;
Naohiro Sugiyama, Aichi-ken, JP;
Toshihiko Tani, Aichi-ken, JP;
Nobuo Kamiya, Aichi-ken, JP;
Hiroaki Wakayama, Aichi-ken, JP;
Yoshiaki Fukushima, Aichi-ken, JP;
Kazukuni Hara, Kariya, JP;
Fusao Hirose, Kariya, JP;
Shoichi Onda, Kariya, JP;
Kunihiko Hara, Kariya, JP;
Takashi Onoda, Kariya, JP;
Haruyoshi Kuriyama, Kariya, JP;
Takeshi Hasegawa, Kariya, JP;
Other;
Abstract
Micropipe defects existing in a silicon carbide single crystal are closed within the single crystal. At least a portion of the micropipe defects opened on the surface of the silicon carbide single crystal (SiC substrate) is sealed up with a coating material. Then heat treatment is performed so as to saturate the inside of the micropipe defects with silicon carbide vapors. By this, the micropipe defects existing in the SiC substrate can be closed within the SiC substrate, not in a newly grown layer. Further, the micropipe defects can be efficiently closed by filling the micropipe defects with a silicon carbide material by preliminarily using super critical fluid and the like.