The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2001
Filed:
Jun. 24, 1999
Applicant:
Inventors:
Thomas Eugene Grebs, Mountaintop, PA (US);
Rodney Sylvester Ridley, Sr., Mountaintop, PA (US);
Jeffrey P. Spindler, Rochester, NY (US);
Joseph Leonard Cumbo, West Wyoming, PA (US);
Jeffrey Edward Lauffer, Mountaintop, PA (US);
Assignee:
Intersil Corporation, Palm Bay, FL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/976 ; H01L 2/348 ; H01L 2/352 ; H01L 2/940 ;
U.S. Cl.
CPC ...
H01L 2/976 ; H01L 2/348 ; H01L 2/352 ; H01L 2/940 ;
Abstract
A semiconductor device includes a source region and a gate disposed at the upper surface of a silicon substrate, which includes a drain region for the device. On the lower surface of the substrate is disposed a backmetal drain terminal comprising a stack that includes a first layer of tantalum and an outermost second layer of copper.
Grebs, Thomas. (2001). Backmetal drain terminal with low stress and thermal resistance (U.S. Patent No. 6211550). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6211550
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile