The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2001
Filed:
Aug. 26, 1998
Mark I. Gardner, Cedar Creek, TX (US);
Mark C. Gilmer, Austin, TX (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A transistor and a method of making the same are provided. The transistor includes a substrate and a gate dielectric layer positioned on the substrate that has first and second sidewall spacers. A gate electrode is positioned on the gate dielectric layer between the first and second sidewall spacers. A semiconductor layer is positioned on the substrate and adjacent the gate dielectric layer. First and second source/drain regions are provided wherein each of the first and second source/drain regions has a first portion positioned in the semiconductor layer and a second portion positioned in the substrate. Processing of the gate dielectric layer and the sidewall spacers is integrated.