The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2001
Filed:
Apr. 14, 1998
Applicant:
Inventor:
Chen-Chung Hsu, Taichung, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
A three-dimensional, deep-trench, high-density ROM and its manufacturing method are provided. The ROM device comprises a silicon substrate having a plurality of parallel trenches above it surface, wherein, between every two adjacent trenches, there is a higher region. During programming of the ROM device, deeper trenches are formed to define the OFF-state non-conducting memory cells, so that misalignment problems that lead to transistor cell leakage are prevented. The ROM device provides reduced breakdown of the source/drain regions as well.