The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2001
Filed:
Feb. 26, 1999
Nestor A. Bojarczuk, Poughkeepsie, NY (US);
Supratik Guha, New City, NY (US);
Arunava Gupta, Valley Cottage, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A process for cheaply fabricating a substantially single crystal or a polycrystalline semiconductor structure on a host substrate. The process begins by depositing a layer of wide band gap nitride material,, such as gallium nitride, aluminum nitride and/or indium nitride, on a sapphire substrate,. The semiconductor structure 14 is then grown on the nitride layer. Next, the host substrate,is attached with a bonding agent to an exposed surface area of the semiconductor structure,. The sapphire substrate is lifted off by irradiation in which nitrogen is dissociated from the nitride layer.