The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2001
Filed:
Feb. 16, 1999
Applicant:
Inventors:
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/976 ;
Abstract
An n,semiconductor region (,) is formed in a lower portion (,) of a p-type diffusion region (,) where a channel is created. The n,semiconductor region (,) is formed in a region extending from a one-side major surface of a semiconductor layer (,) up to the lower portion (,) of the p-type diffusion region (,). The impurity concentration of the n,semiconductor region (,) is determined higher than that of a n,semiconductor region (,). With this structure, it is possible to reduce an on-resistance without deteriorating a withstand avalanche voltage.