The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2001
Filed:
Jul. 07, 1998
Applicant:
Inventors:
Assignee:
Fujitsu Limited, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/1072 ; H01L 3/1109 ; H01L 3/10328 ; H01L 3/10336 ;
U.S. Cl.
CPC ...
H01L 3/1072 ; H01L 3/1109 ; H01L 3/10328 ; H01L 3/10336 ;
Abstract
A first surface layer made of compound semiconductor material is defined in a surface area of a substrate. A first intermediate layer is formed on the surface layer, the first intermediate layer being made of compound material having Ga as a III group element and S as a VI element and having a thickness of at least two monolayers or thicker. A first electrode is formed on the first intermediate layer, being electrically connected to the first surface layer with an ohmic contact.