The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2001
Filed:
Dec. 07, 1998
Applicant:
Inventors:
Diana M. Schonauer, San Jose, CA (US);
Steven C. Avanzino, Cupertino, CA (US);
Kai Yang, Fremont, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ; H01L 2/1461 ;
U.S. Cl.
CPC ...
H01L 2/1302 ; H01L 2/1461 ;
Abstract
The formation and/or growth of dendrites emanating from Cu or Cu alloy lines into a bordering open dielectric field are prevented or substantially reduced by chemically removing a portion of the surface from the dielectric field and from between the lines after CMP with a solution comprising HF and H,O. Embodiments include removing up to 50 Å of silicon oxide by treating the wafer in a spray acid processor with a solution containing HF and deionized water at a water to acid ratio of about 100:1 to about 250:1.