The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2001
Filed:
Jul. 09, 1999
Shih-Ying Hsu, Hsinchu, TW;
Abstract
A method for fabricating a metal interconnect involves forming a first dielectric layer on the substrate having metal lines formed thereon, wherein the top surface of the first dielectric layer is lower than that of the metal line. As a result, the top surface and a part of the sidewall of the metal line are exposed. A spacer is then formed on the exposed sidewall of the metal line. A second dielectric layer is formed on the substrate, wherein the spacer has different etching selectivity from the second dielectric layer. With the spacer serving as an etching stop layer, a via opening is formed in the second dielectric layer, while the via opening is filled with a metal plug to form a via plug.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile