The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2001
Filed:
Oct. 08, 1999
Feng Gao, Singapore, SG;
Chartered Semiconductor Manufacturing Ltd., Singapore, SG;
Abstract
In one embodiment, a first dielectric layer (,) is formed overlying a semiconductor substrate (,). A portion of the first dielectric layer (,) is then etched using a patterned masking layer (,). The patterned masking layer (,) is removed and an intermediate polishing layer (,) is formed overlying the first dielectric layer (,). A second dielectric layer (,) is formed overlying the intermediate polishing layer (,), and the second dielectric layer (,) is polished to expose a portion of the intermediate polishing layer (,), and to determine a polishing rate for the second dielectric layer (,). The polishing rate for the second dielectric layer (,) is then used to calculate a polishing time for the first dielectric layer (,), and the first dielectric layer (,) is polished for the calculated time.