The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2001
Filed:
Dec. 10, 1998
Applicant:
Inventor:
Woon-Kyung Lee, Suwon, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18242 ;
U.S. Cl.
CPC ...
H01L 2/18242 ;
Abstract
There are provided a semiconductor device and a fabricating method thereof, in which a plurality of buried diffusion layers repeatedly extend on a semiconductor substrate and a plurality of word lines repeatedly extend on the buried diffusion layers, perpendicularly to the buried diffusion layers. The cross-sections of the word lines are shaped in asymmetrical polygons, with odd-numbered word lines having the same cross-section and the even-numbered word lines having the same cross-section. Narrow gate electrodes can be formed on the buried diffusion layers, using a spacer mask, so that the area of a memory cell array can be reduced by 50% and thus a cell integration level can be increased.