The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2001
Filed:
Jun. 15, 1998
Hidekimi Kadokura, Tokyo, JP;
Kabushikikaisha Kojundokagaku Kenkyusho, Saitama, JP;
Abstract
To provide Ru compounds which are in the form of a liquid at room temperature to be used in forming Ru and RuO,films for electrodes in semiconductor devices by the CVD method and a process for producing these compounds. Because of being a liquid at room temperature and having a sufficient vapor ressure at about 100° C., bis(ethylcyclopentadienyl)ruthenium or bis(isopropylcyclopentadienyl)ruthenium can be quantitatively supplied via gas bubbling or with the use of a liquid mass flow controller as a feedstock in the CVD method and thermally decomposed on a substrate at 600° C. in a hydrogen atmosphere to give pure Ru films. These compounds can be obtained at a high yield by reacting respectively ruthenium trichloride hydrate and ethylcyclopentadiene or isopropylcyclopentadiene with a zinc powder in an alcohol solvent at −30 to 0° C.