The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2001
Filed:
Jun. 04, 1998
Hiroshi Akahori, Hamamatsu, JP;
Masaharu Muramatsu, Hamamatsu, JP;
Hamamatsu Photonics K.K., Shizuoka-ken, JP;
Abstract
An n-type buried channel, a silicon oxide film, a poly-Si transfer electrode, a PSG film as an insulating interlayer, an aluminum interconnection, and a silicon nitride film are stacked on one surface of a p-type silicon substrate to form a CCD. The other surface is protected by a silicon oxide film, and a p,-type accumulation layer is formed on the silicon oxide film, thereby forming a back-illuminated CCD on which light, electromagnetic wave, charged particles, or the like is incident through the other surface. A glass substrate is anodically bonded on the CCD via an insulating polyimide film, and a conductive aluminum film. Therefore, the mechanical strength of the device is kept high, and the sensitivity can be increased by thinning the silicon substrate.