The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2001
Filed:
Oct. 05, 1998
Applicant:
Inventors:
Assignee:
Vanguard International Semiconductor Corporation, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ; H01L 2/18242 ;
U.S. Cl.
CPC ...
H01L 2/1302 ; H01L 2/18242 ;
Abstract
A process for avoiding dishing in a planarizing layer whose final thickness is reduced by Chem. Mech. Polishing, is described. The first step is to coat the surface to be planarized with a layer of a hard dielectric material, such as silicon nitride, prior to depositing the planarizing medium. After the latter has been reflowed, its thickness is reduced by means of CMP. While CMP is being applied, the etch rate is constantly sensed. When the etch front approaches the aforementioned hard layer a decrease in the etch rate is sensed and etching is terminated, thereby eliminating any dishing effects.