Method of forming a silicide layer using an angled pre-amorphization implant

Abstract

An embodiment of the instant invention is a method of making a transistor having a silicided gate structure insulatively disposed over a semiconductor substrate which lies in an x-y plane, the method comprising the steps of: forming a semiconductive structure insulatively disposed over the semiconductor substrate (step,of FIG.,); amorphizing a portion of the conductive structure by introducing an amorphizing substance into the semiconductive structure at an angle, theta, which is greater than seven degrees from a z-axis which is normal to the semiconductor substrate (step,of FIG.,); forming a metal layer on the conductive structure (step,of FIG.,); and wherein the metal layer interacts with the semiconductive structure in the amorphized portion of the conductive structure so as to form a lower resistivity silicide on the conductive structure (step,of FIG.,). Preferably, the semiconductive structure is comprised of a material selected from the group consisting of: doped polysilicon, undoped polysilicon, epitaxial silicon, and any combination thereof; and the metal layer is comprised of a material selected from the group consisting of: titanium, Co, W, Mo, nickel, platinum, palladium, and any combination thereof.