The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2001
Filed:
Feb. 09, 1999
Lisa Sugiura, Kawasaki, JP;
Mariko Suzuki, Yokohama, JP;
Kazuhiko Itaya, Yokohama, JP;
Hidetoshi Fujimoto, Kawasaki, JP;
Johji Nishio, Kawasaki, JP;
John Rennie, Tokyo, JP;
Hideto Sugawara, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
The present invention provides a nitride system semiconductor device which decreases in cost and improves productivity without heat treatment after the growth and which increases lifetime and reliability by enhancing the quality of a p-type conductive layer, and a method for manufacturing the nitride system semiconductor device. The nitride system semiconductor device has a multilayer structure of an n-type In,Ga,Al,B,N,P,As,(0≦x, 0≦y 0≦z, 0≦x+y+z≦1, 0<m, 0≦n, 0<m+n≦1) layer, a p-type In,Ga,Al,B,N,P,As,(0≦x, 0≦y, 0≦z, 0≦x+y+z≦1, 0<m, 0<n, 0<m+n≦1) layer, and an electrode,formed on a substrate. The oxygen concentration of the surface of the p-type In,Ga,Al,B,N,P,As,layer is 5×10,cm,or lower.