The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2001
Filed:
May. 17, 1999
Applicant:
Inventor:
Masanobu Zenke, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/126 ; H01L 2/18242 ;
U.S. Cl.
CPC ...
H01L 3/126 ; H01L 2/18242 ;
Abstract
A fin type storage node electrode projects from an inter-level insulating layer so as to use the top, side and back surfaces thereof for accumulation of electric charge, and testing elements for evaluating properties of the layers of the storage node electrode are concurrently formed directly on the inter-level insulating layer, thereby preventing the testing elements from undesirable breakage.
Zenke, Masanobu. (2001). Semiconductor device with unbreakable testing elements for evaluating components and process of fabrication thereof (U.S. Patent No. 6204076). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6204076
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile