The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2001
Filed:
Sep. 13, 1999
Martin Schrems, Langerbrück, DE;
Norbert Arnold, Chestnut Ridge, NY (US);
Siemens Aktiengesellschaft, Munich, DE;
Abstract
The present invention provides a method for fabricating a trench capacitor, in particular for use in a semiconductor memory cell (,), with an insulation collar (,), having the following steps: provision of a substrate (,); formation of a trench (,) in the substrate (,); provision of a first layer (,) on the trench wall; provision of a second layer (,) on the first layer (,) on the trench wall; filling of the trench (,) with a first filling material (,); removal of the first filling material (,) from the upper region of the trench (,) in order to define a collar region; removal of the second layer (,) from the upper region of the trench (,); removal of the first filling material (,) from the lower region of the trench (,); removal of the first layer (,) from the upper region of the trench (,); local oxidation of the upper region of the trench (,) in order to produce the insulation collar (,); removal of the first and second layers (,) from the lower region of the trench; formation of a dielectric layer (,) in the lower region of the trench (,) and on the inner side of the insulation collar (,); and filling of the trench (,) with a conductive second filling material (,).