The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2001
Filed:
Nov. 06, 1998
Mark I. Gardner, Cedar Creek, TX (US);
Frederick N. Hause, Austin, TX (US);
Michael P. Duane, Austin, TX (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
In a plurality of series-coupled IGFET devices, wherein each pair of devices in the series shares a common source/drain terminal, only the source/drain regions acting as drain terminals are provided with a lightly-doped region. The presence of the lightly-doped source/drain regions in the portions of the source/drain regions acting as drain terminals provides protection against “hot-carrier” effects. By not having lightly-doped portions in portions of the source/drain regions acting as sources, the resistance resulting from the presence of the additional lightly-doped portions of the remaining source/drain regions in the series of IGFET devices results in lower resistance experienced by the conduction current. According to a second embodiment of the invention, only the non-shared source/drain terminal acting as drain terminal is provided with a lightly-doped region. In this manner, a large portion of the “hot-carrier” effects are reduced, while the resistance to conduction current for the total resistance of the devices is lowered still further.