The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2001
Filed:
Oct. 07, 1999
Haruo Iwasaki, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device having capacitor contact holes. The method comprises: forming a first insulating film to cover the gate electrode and the source/drain electrodes; forming a second insulating film on the first insulating film; forming a third insulating film made of material different from that of the second insulating film on the second insulating film; forming a first resist film on the third insulating film; patterning the first resist film by using a first exposure mask to form a patterned first resist film; selectively removing the third insulating film by using the patterned first resist film as a mask; forming a second resist film to cover the patterned first resist film; patterning the second resist film by using a second exposure mask to form a patterned second resist film; selectively removing the first and second insulating films on at least a portion of one of the source/drain regions in each of the element forming regions by using the patterned first and second resist films as a mask to form capacitor contact holes; and forming a conductive film to fill the capacitor contact holes.