The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2001
Filed:
Apr. 20, 2000
Haruo Iwasaki, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
The present invention provides a method of forming at least a bottom electrode of a capacitor in a semiconductor device. The method comprises the steps forming a first insulation film on a multilayer structure over a semiconductor substrate; forming at least a contact hole which penetrates through the first insulation film and the multilayer structure to reach a surface of the semiconductor substrate; selectively removing the first insulation film to form mask patterns on the multilayer structure; forming a single conductive film which extends within the at least contact hole and over the multilayer structure as well as cover the mask patterns; forming a second insulation film on the single conductive film; partially removing the second insulation film and the single conductive film over the mask patterns so that tops of the mask patterns are shown; and removing remaining parts of the second insulation film and the mask patterns to form at least a bottom electrode comprising a single conductive layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile