The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2001
Filed:
Dec. 16, 1999
Applicant:
Inventors:
Mukta S. Farooq, Hopewell Junction, NY (US);
Harvey C. Hamel, Poughkeepsie, NY (US);
Robert A. Rita, Wappingers Falls, NY (US);
Herbert I. Stoller, Wappingers Falls, NY (US);
Assignee:
International Business Machines Corp., Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 3/126 ; B32B 3/118 ; H01G 4/06 ;
U.S. Cl.
CPC ...
B32B 3/126 ; B32B 3/118 ; H01G 4/06 ;
Abstract
A multi-layer ceramic capacitor and method of manufacturing the capacitor, the capacitor having signal vias surrounded by an area containing a material having a low dielectric constant, the via and surrounding area of low dielectric constant material inserted in a material having a high dielectric constant.
Farooq, Mukta. (2001). Method for making high k dielectric material with low k dielectric sheathed signal vias (U.S. Patent No. 6200400). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6200400
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile