The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2001
Filed:
Dec. 08, 1998
Applicant:
Inventor:
Jen-Yao Hsu, Hsinchu Hsien, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/106 ; H01L 3/1072 ; H01L 3/1109 ; H01L 3/10328 ; H01L 3/10336 ;
U.S. Cl.
CPC ...
H01L 3/106 ; H01L 3/1072 ; H01L 3/1109 ; H01L 3/10328 ; H01L 3/10336 ;
Abstract
A photodiode is provided comprising a substrate, a well with a first electric type within the substrate, a heavily doped region with a second electric type within the well, and a insulating layer on the substrate. The insulating layer in the position on the heavily doped region is thinner than in other positions. A junction is thus formed between the heavily doped region and the well.
Hsu, Jen-Yao. (2001). Photodiode (U.S. Patent No. 6198148). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6198148
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile