The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2001
Filed:
Apr. 24, 1996
Akihiko Ohsaki, Hyogo-ken, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
Highly refractory titanium silicide structure comprises a titanium silicide film formed on a silicon crystal surface and a thermal oxide film formed on this titanium silicide film. A manufacturing method of the highly refractory titanium silicide is as follows. Initially, titanium is deposited on surfaces including a silicon crystal surface to form a titanium film (,) of a predetermined thickness. This titanium film (,) is then heat-treated in vacuum or in a certain atmosphere which does not cause any oxidation, to form a titanium silicide film (,). Subsequently, further heat treatment at temperatures between 600° C. and 1,000° C. in oxygen atmosphere is done for a predetermined time to oxidize the surface of the titanium silicide film (,). This oxidization of the surface of the titanium silicide film (,) restrains agglomeration in the titanium silicide which might occur in the subsequent annealing, so that the resistance value increase can be prevented.