The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2001
Filed:
Oct. 27, 1999
Tsutomu Ashida, Yamatokoriyama, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A memory cell is formed in which N channel transistors A and P channel transistors B having respectively different conduction types are alternately fitted. The channel section of the N channel transistor A and the P-type drain,of the P channel transistor B are commonly used in a shared manner, and the channel section of the P channel transistor B and the N-type source,of the N channel transistor A are commonly used in a shared manner; thus, it is possible to achieve high integrity. Moreover, the junction between the adjacent P-type drain,and N-type source,is always maintained in a reverse bias state so that the P-type drain,and the N-type source,are separated. With this arrangement, the separation area between the respective transistor elements is minimized so that it is possible to provide a semiconductor device which can achieve miniaturization and high integrity.