The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2001
Filed:
Feb. 19, 1998
Mariko Habu, Yokohama, JP;
Yusuke Kohyama, Yokosuka, JP;
Toru Ozaki, Tokyo, JP;
Keiji Hosotani, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A semiconductor memory includes a semiconductor substrate, a memory cell portion formed on the substrate and including stacked capacitors formed on the substrate, each having a storage electrode formed on a bottom surface of a recess in an insulating layer, a capacitor insulating film formed on the storage electrode, and a plate electrode formed on the capacitor insulating film and lower than an upper edge of the recess, and a first multilayered interconnecting layer having an interconnecting layer including a plate interconnection connected to the plate electrode, and a peripheral circuit portion formed adjacent to the memory cell portion on the substrate and comprising a second multilayered interconnecting layer. The plate interconnection includes a portion so formed as to bury the recess and connected to the plate electrode, and the second multilayered interconnecting layer includes an interconnecting layer having an upper surface substantially leveled with an upper surface of the interconnecting layer including the plate interconnection of the first multilayered interconnecting layer.