The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 06, 2001

Filed:

Mar. 11, 1997
Applicant:
Inventors:

Toshihide Nabatame, Hitachi, JP;

Takaaki Suzuki, Hitachinaka, JP;

Tomoji Oishi, Hitachi, JP;

Ken Takahashi, Tokai-mura, JP;

Kunihiro Maeda, Hitachi, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/922 ;
U.S. Cl.
CPC ...
H01L 2/922 ;
Abstract

A ferroelectric element is provided that can be highly densely integrated having a high Pr and a small Ec by using a ferroelectric thin film of the perovskite structure. A large distortion is imparted to the crystalline lattices of a ferroelectric thin film of the perovskite structure by using in combination elements having dissimilar ionic radii for the A-site that constitutes crystalline lattices, for the B-site and for the C-site that produces polarization, in order to obtain a ferroelectric element of a structure in which the ferroelectric thin film exhibiting a high spontaneous polarization and a small coersive electric field is sandwiched by the electrodes.


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