The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2001
Filed:
Mar. 18, 1999
Vladislav Vassiliev, Singapore, SG;
Chartered Semiconductor Manufacturing Ltd., Singapore, SG;
Abstract
A method for fabricating a silicon oxide and silicon glass layers at low temperature using soft power-optimized Plasma-Activated CVD with a TEOS-ozone-oxygen reaction gas mixture (TEOS O,/O,PACVD) is described. It combines advantages of both low temperature Plasma-Enhanced Chemical Vapor Deposition (PECVD) and TEOS-ozone Sub-Atmospheric Chemical Vapor Deposition (SACVD) and yields a coating of silicon oxide with stable and high deposition rate, no surface sensitivity, good film properties, conformal step coverage and good gap-fill. Key features of the invention's O,/O,PACVD process are: a plasma is maintain throughout the entire deposition step in a parallel plate type reactor chamber, the precise RF plasma density, ozone concentration in oxygen and the deposition temperature. These features provide the reaction conditions for the proper O,/O,reaction mechanism that deposits a conformal silicon oxide layer. The process has significant implication for semiconductor device manufacturing involving the deposition of a dielectric over a conducting non-planar surface.