The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2001
Filed:
Dec. 04, 1997
Suguru Tabara, Hamamatsu, JP;
Yamaha Corporation, , JP;
Abstract
A method of manufacturing a semiconductor device includes: a step of forming a conductive layer on a semiconductor substrate, the conductive layer being made of aluminum or aluminum alloy; a step of forming a resist pattern on the conductive layer, the resist pattern having an opening pattern including a narrow space having a high aspect ratio and an open space having a low aspect ratio; a main etching step of dry-etching the conductive layer by using the resist mask as an etching mask, wherein the conductive layer is almost etched in the open space having the low aspect ratio and not fully etched in the narrow space having the high aspect ratio; and an over etching step of further dry-etching the conductive layer by using the resist mask as an etching mask and by using as etchant a mixed gas of HCl gas and at least one species of gas selected from the group consisting of He, Ar, Ne and H,. The proposed method provides a process of etching an aluminum containing conductive layer at high patterning precision and with high reliability while suppressing electron shading damages.