The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2001
Filed:
Mar. 19, 1999
Applicant:
Inventor:
Chein-Cheng Wang, Taichung Hsien, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/144 ;
Abstract
A method for forming a metal/metal nitride layer. A dielectric layer is formed on a substrate comprising a conductive region. The dielectric layer comprises an opening exposing a portion of the conductive region. A conformal metal layer is formed on the dielectric layer by physical vapor deposition using a collimator to cover the exposed conductive region. A metal nitride layer is formed on the metal layer. A part of the metal layer may be exposed due to poor step coverage. An implanting process is performed on the metal nitride layer and on the exposed metal layer using a nitric gas.