The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2001
Filed:
Jun. 08, 1999
Chia-Chieh Yu, Taipei Hsien, TW;
Other;
Abstract
A method for fabricating a passivation layer of a gate electrode. A conductive layer, a mask layer and a patterned photoresist layer are sequentially formed on a gate oxide layer. The photoresists layer is thick enough to precisely transfer a pattern from the photoresist layer to the mask layer. The photoresist layer is stripped, and an etching step is performed to transfer the patterned of the mask layer onto the conductive layer, so as to form a gate electrode. During the etching step, a corner of the mask layer is partly truncated to form a cap layer with an arc shape corner. A conformal liner oxide layer is formed on the cap layer and a sidewall of the gate electrode. A spacer is further formed on the conformal liner oxide layer extending over a top surface of the gate electrode.